Memory-News
The new Qualcomm Snapdragon 855 Plus will power the gaming smartphones of tomorrow The Adreno 640 GPU inside the 855 Plus is 15 percent more powerful than the regular Snapdragon 855 chipset. Qualcomm announced its flagship Snapdragon 855 SoC as the chipset engineered for the premium handsets of 2019. The 855 chipset replaced second-generation 10nm […]
SDM855+ of Qualcomm Read More »
Snapdragon 855: phones list, specs and benchmarks Here are the capabilities of the Snapdragon 855 and the phones that get them There’s a good chance that the Qualcomm Snapdragon 855 chipset is powering your smartphone if you bought a new device in 2019 and it’s an Android. This small, 7nm chip delivers some impressive performance
SDM855 Snapdragon 855 Read More »
The Evolution of LPDDR4 to LPDDR4X LPDDR4 was introduced in 2014 about two years after LPDDR3. This was probably the fastest transition for a new generation memory ever in JEDEC history. New products and features being introduced into the mobile ecosystem requiring faster and lower power memory propelled the fast development. LPDDR4 succeeded in increasing
The Evolution of LPDDR4 to LPDDR4x Read More »
Samsung Electronics, announced today that it is introducing the industry’s first 8-gigabyte (GB) LPDDR4 (low power, double data rate 4) mobile DRAM package, which is expected to greatly improve mobile user experiences, especially for those using Ultra HD, large-screen devices. The 8GB mobile DRAM package utilizes four of the newest 16 gigabit (Gb) LPDDR4 memory
New 8Gb DDR4 based on most advanced 1z-nm process enables DRAM solutions with ultra-high performance and power efficiency The 1z-nm 8Gb DDR4 to be in mass production in the second half of this year Samsung Electronics, the world leader in advanced memory technology, today announced that it has developed a 3rd-generation 10-nanometer-class (1z-nm) eight-gigabit (Gb)
Based on the company’s fifth-generation V-NAND, the new memory meets the newest Universal Flash Storage industry specifications at a speed 20x faster than a typical microSD card Samsung plans to launch a 1-Terabyte version within the second half of the year eUFS 512GB UFS 3.0 front and back. SEOUL, Korea ― February 27, 2019 ―
Samsung Offering smaller package size and higher capacity, up to 8GB, Samsung’s breakthrough LPDDR4X is enabling the next evolution of ultra-slim mobile devices.
Samsung Offering smaller package size and higher capacity up to 8GB Read More »
SK Hynix’s new 4D NAND uses a charge trap design, just like the flash produced by Samsung and WD/Toshiba. SK Hynix has used Charge Trap Flash (CTF) designs for several years, so it isn’t new, and currently Micron and Intel are the only two flash-fabbers using floating gate technology. Intel and Micron plan to diverge
SK Hynix’s new 4D NAND uses a charge trap design Read More »